Electrical Measurement of the Direct Spin Hall Effect in Fe/InxGa1-xAs Heterostructures
Abstract
We report on an all-electrical measurement of the spin Hall effect in epitaxial Fe/InxGa1-xAs heterostructures with n-type (Si) channel doping and highly doped Schottky tunnel barriers. A transverse spin current generated by an ordinary charge current flowing in the InxGa1-xAs is detected by measuring the spin accumulation at the edges of the channel. The spin accumulation is identified through the observation of a Hanle effect in the voltage measured by pairs of ferromagnetic Hall contacts. We investigate the bias and temperature dependence of the resulting Hanle signal and determine the skew and side-jump contributions to the total spin Hall conductivity.
- Publication:
-
Physical Review Letters
- Pub Date:
- October 2010
- DOI:
- 10.1103/PhysRevLett.105.156602
- arXiv:
- arXiv:1006.1163
- Bibcode:
- 2010PhRvL.105o6602G
- Keywords:
-
- 72.25.Dc;
- 72.25.Rb;
- 85.75.-d;
- Spin polarized transport in semiconductors;
- Spin relaxation and scattering;
- Magnetoelectronics;
- spintronics: devices exploiting spin polarized transport or integrated magnetic fields;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 10 pages, submitted to Phys. Rev. Lett