Element-resolved orbital polarization in (III,Mn)As ferromagnetic semiconductors from K -edge x-ray magnetic circular dichroism
Abstract
Using x-ray magnetic circular dichroism (XMCD), we determine the element-specific character and polarization of unoccupied states near the Fermi level in (Ga,Mn)As and (In,Ga,Mn)As thin films. The XMCD at the AsK absorption edge consists of a single peak located on the low-energy side of the edge, which increases with the concentration of ferromagnetic Mn moments. The XMCD at the MnK edge is more detailed and is strongly concentration dependent, which is interpreted as a signature of hole localization for low Mn doping. The results indicate a markedly different character of the polarized holes in low-doped insulating and high-doped metallic films, with a transfer of the hole orbital magnetic moment from Mn to As sites on crossing the metal-insulator transition.
- Publication:
-
Physical Review B
- Pub Date:
- June 2010
- DOI:
- 10.1103/PhysRevB.81.235208
- arXiv:
- arXiv:1005.4577
- Bibcode:
- 2010PhRvB..81w5208W
- Keywords:
-
- 75.50.Pp;
- 71.55.Eq;
- 78.70.Dm;
- 71.30.+h;
- Magnetic semiconductors;
- III-V semiconductors;
- X-ray absorption spectra;
- Metal-insulator transitions and other electronic transitions;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 5 figures, to be published in Physical Review B