Carrier recombination dynamics in InxGa1-xN/GaN multiple quantum wells
Abstract
We have measured the carrier recombination dynamics in InGaN/GaN multiple quantum wells over an unprecedented range in intensity and time by means of time-resolved photoluminescence spectroscopy. We find that, at times shorter than 30 ns, they follow an exponential form and a power law at times longer than 1μs . To explain these biphasic dynamics, we propose a simple three-level model where a charge-separated state interplays with the radiative state through charge transfer following a tunneling mechanism. We show how the distribution of distances in charge-separated states controls the dynamics at long time. Our results imply that charge recombination happens on nearly isolated clusters of localization centers.
- Publication:
-
Physical Review B
- Pub Date:
- August 2010
- DOI:
- 10.1103/PhysRevB.82.085305
- arXiv:
- arXiv:1004.2463
- Bibcode:
- 2010PhRvB..82h5305B
- Keywords:
-
- 78.47.D-;
- 78.55.Cr;
- 78.67.De;
- III-V semiconductors;
- Quantum wells;
- Condensed Matter - Materials Science
- E-Print:
- 11 pages, 3 figures, accepted for publication in PHYSICAL REVIEW B