Analytic Model for the Surface Potential and Drain Current in Negative Capacitance Field-Effect Transistors
Abstract
In 2008, Salahuddin and Datta proposed that a ferroelectric material operating in the negative capacitance region could act as a step-up converter of the surface potential in a MOS structure, opening a new route for the realization of transistors with steeper subthreshold characteristics (S<60 mV/decade). In this letter, a comprehensive physics-based surface potential and drain current model for the negative capacitance field-effect transistor is reported. The model is aimed to evaluate the potentiality of such transistors for low-power switching applications. Moreover it provides a model core for memories devices relying on the hysteretic behavior of the ferroelectric gate insulator.
- Publication:
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IEEE Transactions on Electron Devices
- Pub Date:
- October 2010
- DOI:
- 10.1109/TED.2010.2062188
- arXiv:
- arXiv:1004.0015
- Bibcode:
- 2010ITED...57.2405J
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 9 pages, 6 figures