Dynamics of charge leakage from self-assembled CdTe quantum dots
Abstract
We study the leakage dynamics of charge stored in an ensemble of CdTe quantum dots embedded in a field-effect structure. Optically excited electrons are stored and read out by a proper time sequence of bias pulses. We monitor the dynamics of electron loss and find that the rate of the leakage is strongly dependent on time, which we attribute to an optically generated electric field related to the stored charge. A rate equation model quantitatively reproduces the results.
- Publication:
-
Applied Physics Letters
- Pub Date:
- May 2010
- DOI:
- 10.1063/1.3430524
- arXiv:
- arXiv:1003.6040
- Bibcode:
- 2010ApPhL..96t1905K
- Keywords:
-
- cadmium compounds;
- II-VI semiconductors;
- self-assembly;
- semiconductor quantum dots;
- 78.67.Hc;
- 72.20.Jv;
- 73.21.La;
- Quantum dots;
- Charge carriers: generation recombination lifetime and trapping;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 4 pages, submitted to Applied Physics Letters