Colossal Magnetoresistance in an Ultraclean Weakly Interacting 2D Fermi Liquid
Abstract
We report the observation of a new phenomenon of colossal magnetoresistance in a 40 nm wide GaAs quantum well in the presence of an external magnetic field applied parallel to the high-mobility 2D electron layer. In a strong magnetic field, the magnetoresistance is observed to increase by a factor of ∼300 from 0 to 45 T without the system undergoing any metal-insulator transition. We discuss how this colossal magnetoresistance effect cannot be attributed to the spin degree of freedom or localization physics, but most likely emanates from strong magneto-orbital coupling between the two-dimensional electron gas and the magnetic field. Our observation is consistent with a field-induced 2D-to-3D transition in the confined electronic system.
- Publication:
-
Physical Review Letters
- Pub Date:
- May 2010
- DOI:
- 10.1103/PhysRevLett.104.216801
- arXiv:
- arXiv:1003.5920
- Bibcode:
- 2010PhRvL.104u6801Z
- Keywords:
-
- 73.43.Qt;
- 75.47.De;
- 75.47.Gk;
- Magnetoresistance;
- Giant magnetoresistance;
- Colossal magnetoresistance;
- Condensed Matter - Strongly Correlated Electrons;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- Phys. Rev. Lett. 104, 216801 (2010)