Strong surface scattering in ultrahigh-mobility Bi2Se3 topological insulator crystals
Abstract
While evidence of a topologically nontrivial surface state has been identified in surface-sensitive measurements of Bi2Se3 , a significant experimental concern is that no signatures have been observed in bulk transport. In a search for such states, nominally undoped single crystals of Bi2Se3 with carrier densities approaching 1016cm-3 and very high mobilities exceeding 2m2V-1s-1 have been studied. A comprehensive analysis of Shubnikov-de Haas oscillations, Hall effect, and optical reflectivity indicates that the measured electrical transport can be attributed solely to bulk states, even at 50 mK at low Landau-level filling factor, and in the quantum limit. The absence of a significant surface contribution to bulk conduction demonstrates that even in very clean samples, the surface mobility is lower than that of the bulk, despite its topological protection.
- Publication:
-
Physical Review B
- Pub Date:
- June 2010
- DOI:
- 10.1103/PhysRevB.81.241301
- arXiv:
- arXiv:1003.2382
- Bibcode:
- 2010PhRvB..81x1301B
- Keywords:
-
- 71.18.+y;
- 72.20.My;
- 78.20.Ci;
- 78.30.-j;
- Fermi surface: calculations and measurements;
- effective mass g factor;
- Galvanomagnetic and other magnetotransport effects;
- Optical constants;
- Infrared and Raman spectra;
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Strongly Correlated Electrons
- E-Print:
- 4 pgs, 4 figs