Conducting interfaces between band insulating oxides: The LaGaO3/SrTiO3 heterostructure
Abstract
We show that the growth of the heterostructure LaGaO3/SrTiO3 yields the formation of a highly conductive interface. Our samples were carefully analyzed by high resolution electron microscopy, in order to assess their crystal perfection and to evaluate the abruptness of the interface. Their carrier density and sheet resistance are compared to the case of LaAlO3/SrTiO3 and a superconducting transition is found. The results open the route to widening the field of polar-nonpolar interfaces, pose some phenomenological constrains to their underlying physics and highlight the chance of tailoring their properties for future applications by adopting suitable polar materials.
- Publication:
-
Applied Physics Letters
- Pub Date:
- October 2010
- DOI:
- 10.1063/1.3496440
- arXiv:
- arXiv:1001.3956
- Bibcode:
- 2010ApPhL..97o2111P
- Keywords:
-
- carrier density;
- interface phenomena;
- lanthanum compounds;
- localised states;
- scanning electron microscopy;
- strontium compounds;
- superconducting transitions;
- transmission electron microscopy;
- 73.40.-c;
- 73.20.Fz;
- Electronic transport in interface structures;
- Weak or Anderson localization;
- Condensed Matter - Materials Science;
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Strongly Correlated Electrons
- E-Print:
- in press Appl. Phys. Lett. 97, 1 (2010)