The metal-insulator transition and lattice distortion in semiconductors
Abstract
A relation between the energy of an elementary `insulating' excitation corresponding to the metal-insulator transition and the bandgap width in a semiconductor is obtained. An effect of atomic relaxation on the temperature and pressure dependence of the bandgap width is considered. It is shown that the metal-insulator transition in a semiconductor causes a weak rhombohedral or monoclinic distortion in the case of a diamond and zincblende structure and a weak tetragonal or orthorhombic distortion in the case of a rocksalt structure. A change in the bandgap associated with a ferroelectric (antiferroelectric) transition in a semiconductor is also obtained.
- Publication:
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arXiv e-prints
- Pub Date:
- January 2010
- DOI:
- 10.48550/arXiv.1001.3061
- arXiv:
- arXiv:1001.3061
- Bibcode:
- 2010arXiv1001.3061P
- Keywords:
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- Condensed Matter - Superconductivity
- E-Print:
- 9 pages, REVTeX, Consideration of the metal-insulator transition in underdoped iron pnictide superconductors added