A single crystalline strontium titanate thin film transistor
Abstract
We report herein fabrication and characterization of a thin film transistor (TFT) using single crystalline strontium titanate (SrTiO3) film, which was grown by a pulsed laser deposition technique followed by the thermal annealing treatment in an oxygen atmosphere. Although TFTs on the as-deposited SrTiO3 films (polycrystalline epitaxial films) exhibited poor transistor characteristics, the annealed single crystalline SrTiO3 TFT exhibits transistor characteristics comparable with those of bulk single crystal SrTiO3 field-effect transistor: an on/off current ratio >105, subthreshold swing ∼2.1 V decade-1, and field-effect mobility ∼0.8 cm2 V-1 s-1. This demonstrates the effectiveness of the appropriate thermal annealing treatment of epitaxial SrTiO3 films.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- May 2010
- DOI:
- 10.1063/1.3407568
- arXiv:
- arXiv:0912.4341
- Bibcode:
- 2010JAP...107i6103U
- Keywords:
-
- annealing;
- pulsed laser deposition;
- strontium compounds;
- thin film transistors;
- titanium compounds;
- 85.30.Tv;
- 81.40.Gh;
- 81.15.Fg;
- Field effect devices;
- Other heat and thermomechanical treatments;
- Laser deposition;
- Condensed Matter - Materials Science;
- Condensed Matter - Strongly Correlated Electrons
- E-Print:
- 12 pages, 4 figures