Scaling Properties of {Ge} -{Si}_{x}{Ge}_{1 - x} Core-Shell Nanowire Field-Effect Transistors
Abstract
We demonstrate the fabrication of high-performance Ge-SixGe1-x core-shell nanowire field-effect transistors with highly doped source and drain, and systematically investigate their scaling properties. Highly doped source and drain regions are realized by low energy boron implantation, which enables efficient carrier injection with a contact resistance much lower than the nanowire resistance. We extract key device parameters, such as intrinsic channel resistance, carrier mobility, effective channel length, and external contact resistance, as well as benchmark the device switching speed and ON/OFF current ratio.
- Publication:
-
IEEE Transactions on Electron Devices
- Pub Date:
- February 2010
- DOI:
- 10.1109/TED.2009.2037406
- arXiv:
- arXiv:0912.1827
- Bibcode:
- 2010ITED...57..491N
- Keywords:
-
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Materials Science
- E-Print:
- 5 pages, 4 figures. IEEE Transactions on Electron Devices (in press)