Utilization of a Buffered Dielectric to Achieve High Field-Effect Carrier Mobility in Graphene Transistors
Abstract
We utilize an organic polymer buffer layer between graphene and conventional gate dielectrics in top-gated graphene transistors. Unlike other insulators, this dielectric stack does not significantly degrade carrier mobility, allowing for high field-effect mobilities to be retained in top-gate operation. This is demonstrated in both two-point and four-point analysis, and in the high-frequency operation of a graphene transistor. Temperature dependence of the carrier mobility suggests that phonons are the dominant scatterers in these devices.
- Publication:
-
Nano Letters
- Pub Date:
- December 2009
- DOI:
- 10.1021/nl902788u
- arXiv:
- arXiv:0911.3116
- Bibcode:
- 2009NanoL...9.4474F
- Keywords:
-
- Condensed Matter - Materials Science;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- doi:10.1021/nl902788u