Intrinsic spin Hall effect in noncubic crystals
Abstract
We study the dependence of the intrinsic spin Hall effect on the crystal symmetry and geometry of experiment. The spin current is obtained and the Hall voltage caused by the polarization of the electron spins is computed. The unique dependence of the effect on the crystal symmetry permits the choice of geometry, in which the spin Hall effect can be unambiguously distinguished from the effects due to the orbital motion of charge carriers and due to the magnetic field generated by the transport current.
- Publication:
-
Physical Review B
- Pub Date:
- October 2009
- DOI:
- 10.1103/PhysRevB.80.153105
- arXiv:
- arXiv:0911.0396
- Bibcode:
- 2009PhRvB..80o3105C
- Keywords:
-
- 72.25.-b;
- 72.10.-d;
- 71.70.Ej;
- 85.75.-d;
- Spin polarized transport;
- Theory of electronic transport;
- scattering mechanisms;
- Spin-orbit coupling Zeeman and Stark splitting Jahn-Teller effect;
- Magnetoelectronics;
- spintronics: devices exploiting spin polarized transport or integrated magnetic fields;
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Materials Science
- E-Print:
- 4 pages, 1 figure