Wafer-Scale Synthesis and Transfer of Graphene Films
Abstract
We developed means to produce wafer scale, high-quality graphene films as large as 3 inch wafer size on Ni and Cu films under ambient-pressure and transfer them onto arbitrary substrates through instantaneous etching of metal layers. We also demonstrated the applications of the large-area graphene films for the batch fabrication of field-effect transistor (FET) arrays and stretchable strain gauges showing extraordinary performances. Transistors showed the hole and electron mobilities of the device of 1,100 cm2/Vs and 550 cm2/Vs at drain bias of -0.75V, respectively. The piezo-resistance gauge factor of strain sensor was ~6.1. These methods represent a significant step toward the realization of graphene devices in wafer scale as well as application in optoelectronics, flexible and stretchable electronics.
- Publication:
-
Nano Letters
- Pub Date:
- February 2010
- DOI:
- 10.1021/nl903272n
- arXiv:
- arXiv:0910.4783
- Bibcode:
- 2010NanoL..10..490L
- Keywords:
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- Condensed Matter - Materials Science
- E-Print:
- 18 pages