Fractional topological excitations and quantum phase transition in a bilayer two-dimensional electron gas adjacent to a superconductor film
Abstract
We study a bilayer two-dimension-electron-gas (2DEG) adjacent to a type-II superconductor thin film with a pinned vortex lattice. We find that with increasing interlayer tunneling, the system of half-filling presents three phases: gapped phase-I (topological insulator), gapless critical phase-II (metal), and gapped phase-III (band insulator). The total Hall conductance for phase-I/III is 2/0 e2/h , and has nonquantized values in phase-II. The excitation (response to topological defect, a local vortex defect) in these three phases shows different behaviors due to the topological property of the system, including fractional charge e/2 for each layer in phase-I. While in the case of quarter-filling, the system undergoes a quantum phase transition from metallic phase to topological insulator phase.
- Publication:
-
Physical Review B
- Pub Date:
- March 2010
- DOI:
- 10.1103/PhysRevB.81.125301
- arXiv:
- arXiv:0909.2981
- Bibcode:
- 2010PhRvB..81l5301H
- Keywords:
-
- 73.43.-f;
- 71.10.Pm;
- 74.25.Uv;
- Quantum Hall effects;
- Fermions in reduced dimensions;
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Strongly Correlated Electrons
- E-Print:
- 5 pages, 4 figures