Deep blue light-emitting diodes based on Cd1-xZnxS@ZnS quantum dots

We demonstrate deep blue light-emitting diodes based on chemically synthesized Cd_1-xZn_xS@ZnS quantum dots (QDs). Composite films of poly-(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine) (poly-TPD) and 4,4',N,N'-diphenylcarbazole (CBP) are employed for facilitated hole injection into Cd_1-xZn_xS@ZnS QDs and uniform QD deposition. The fabricated devices possess moderate turn-on voltage (6 V) and external quantum efficiency (0.1-0.3%), and exhibit color-saturated blue emission with a narrow spectral bandwidth of full width at half maximum <25 nm (Commission Internationale de l'Eclairage (CIE) coordinates of (0.169, 0.024) and (0.156, 0.028) for devices with electroluminescence (EL) λ_max at 434 and 454 nm, respectively). Most of the emission originates from the Cd_1-xZn_xS@ZnS QD layers (99% of the total EL emission).