Theory of optical conductivity for dilute Ga1-xMnxAs
Abstract
We construct a semimicroscopic theory, to describe the optical conductivity of Ga1-xMnxAs in the dilute limit, x∼1% . We construct an effective Hamiltonian that captures inside-impurity-band optical transitions as well as transitions between the valence band and the impurity band. All parameters of the Hamiltonian are computed from microscopic variational calculations. We find a metal-insulator transition within the impurity band in the concentration range, x∼0.2-0.3% for uncompensated and x∼1-3% for compensated samples, in agreement with the experiments. We find an optical mass mopt≈me , which is almost independent of the impurity concentration except in the vicinity of the metal-insulator transition, where it reaches values as large as mopt≈10me . We also reproduce a mid-infrared peak at ℏω≈200meV , which redshifts upon doping at a fixed compensation, in quantitative agreement with the experiments.
- Publication:
-
Physical Review B
- Pub Date:
- October 2009
- DOI:
- 10.1103/PhysRevB.80.165202
- arXiv:
- arXiv:0906.0770
- Bibcode:
- 2009PhRvB..80p5202M
- Keywords:
-
- 75.50.Pp;
- 78.66.Fd;
- 78.20.-e;
- Magnetic semiconductors;
- III-V semiconductors;
- Optical properties of bulk materials and thin films;
- Condensed Matter - Materials Science
- E-Print:
- 17 pages, 16 figures, submitted to Physical Review B