Insulator to semi-metal transition in graphene oxide
Abstract
Transport properties of progressively reduced graphene oxide (GO) are described. Evolution of the electronic properties reveals that as-synthesized GO undergoes insulator-semiconductor-semi-metal transitions with reduction. The apparent transport gap ranges from 10 ~ 50 meV and approaches zero with extensive reduction. Measurements at varying degrees of reduction reveal that transport in reduced GO occurs via variable-range hopping and further reduction leads to increased number of available hopping sites.
- Publication:
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arXiv e-prints
- Pub Date:
- May 2009
- DOI:
- 10.48550/arXiv.0905.2799
- arXiv:
- arXiv:0905.2799
- Bibcode:
- 2009arXiv0905.2799E
- Keywords:
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- Condensed Matter - Materials Science
- E-Print:
- 9 pages, 4 figures