Orientation dependence of the Schottky barrier height for La0.6Sr0.4MnO3/SrTiO3 heterojunctions
Abstract
The authors report on the crystallographic orientation dependence of the Schottky properties for heterojunctions between a half-metallic ferromagnet La0.6Sr0.4MnO3 (LSMO) and Nb-doped SrTiO3 semiconductor. The Schottky barrier height determined by in situ photoemission measurements is independent for the substrate orientations (001) and (110), while the magnetic properties of LSMO (110) films are more enhanced than for (001) films. These results suggest that the performance of magnetic devices based on ferromagnetic manganite is improved by using (110)-oriented substrates.
- Publication:
-
Applied Physics Letters
- Pub Date:
- June 2009
- DOI:
- 10.1063/1.3154523
- arXiv:
- arXiv:0905.2018
- Bibcode:
- 2009ApPhL..94x2106M
- Keywords:
-
- 73.40.Ns;
- 79.60.Bm;
- 73.40.Lq;
- 61.72.U-;
- 75.70.Ak;
- 75.50.Dd;
- Metal-nonmetal contacts;
- Clean metal semiconductor and insulator surfaces;
- Other semiconductor-to-semiconductor contacts p-n junctions and heterojunctions;
- Doping and impurity implantation;
- Magnetic properties of monolayers and thin films;
- Nonmetallic ferromagnetic materials;
- Condensed Matter - Materials Science
- E-Print:
- 18 pages, 4 figures