Electron spin relaxation in n-type InAs quantum wires
Abstract
We investigate the electron spin relaxation of n-type InAs quantum wires by numerically solving the fully microscopic kinetic spin Bloch equations with the relevant scattering explicitly included. We find that the quantum-wire size and the growth direction influence the spin relaxation time by modulating the spin-orbit coupling. Due to intersubband scattering in connection with the spin-orbit interaction, spin-relaxation in quantum wires can show different characteristics from those in bulk or quantum wells and can be effectively manipulated by various means.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- October 2009
- DOI:
- 10.1063/1.3234403
- arXiv:
- arXiv:0905.0937
- Bibcode:
- 2009JAP...106g3703L
- Keywords:
-
- electron spin-lattice relaxation;
- III-V semiconductors;
- indium compounds;
- magnetic domain walls;
- quantum wells;
- semiconductor quantum wires;
- spin-orbit interactions;
- 72.25.Rb;
- 73.63.Nm;
- 75.60.Ch;
- 71.70.Ej;
- Spin relaxation and scattering;
- Quantum wires;
- Domain walls and domain structure;
- Spin-orbit coupling Zeeman and Stark splitting Jahn-Teller effect;
- Condensed Matter - Materials Science
- E-Print:
- 8 pages, 6 figures