Electron spin relaxation in graphene: The role of the substrate
Abstract
Theory of the electron-spin relaxation in graphene on the SiO2 substrate is developed. Charged impurities and polar-optical surface phonons in the substrate induce an effective random Bychkov-Rashba-like spin-orbit coupling field, which leads to spin relaxation by the D’yakonov-Perel’ mechanism. Analytical estimates and Monte Carlo simulations show that the corresponding spin relaxation times are between micro- to milliseconds, being only weakly temperature dependent. It is also argued that the presence of adatoms on graphene can lead to spin lifetimes shorter than nanoseconds.
- Publication:
-
Physical Review B
- Pub Date:
- July 2009
- DOI:
- 10.1103/PhysRevB.80.041405
- arXiv:
- arXiv:0905.0424
- Bibcode:
- 2009PhRvB..80d1405E
- Keywords:
-
- 72.25.Rb;
- 73.61.Wp;
- 73.50.Bk;
- Spin relaxation and scattering;
- Fullerenes and related materials;
- General theory scattering mechanisms;
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Other Condensed Matter
- E-Print:
- 5 pages, 4 figures