T1 and T2 spin relaxation time limitations of phosphorous donor electrons near crystalline silicon to silicon dioxide interface defects

A study of donor electron spins and spin-dependent electronic transitions involving phosphorous (P31) atoms in proximity to the (111) oriented crystalline silicon (c-Si) to silicon dioxide (SiO₂) interface is presented for [P31]=10¹⁵cm^-3 and [P31]=10¹⁶cm^-3 at about liquid- H4e temperatures (T=5-15K) . Using pulsed electrically detected magnetic resonance (pEDMR), spin-dependent transitions between the P31 donor state and two distinguishable interface states are observed, namely, (i) P_b centers, which can be identified by their characteristic anisotropy, and (ii) a more isotropic center which is attributed to E^' defects of the SiO₂ bulk close to the interface. Correlation measurements of the dynamics of spin-dependent recombination confirm that previously proposed transitions between P31 and the interface defects take place. The influence of these electronic near-interface transitions on the P31 donor spin-coherence time T₂ as well as the donor spin-lattice relaxation time T₁ is then investigated by comparison of spin Hahn-echo decay measurements obtained from conventional bulk sensitive pulsed electron paramagnetic resonance and surface sensitive pEDMR, as well as surface sensitive electrically detected inversion recovery experiments. The measurements reveal that the T₂ times of both interface states and P31 donor electron spins in proximity to them are consistently shorter than the T₁ times, and both T₂ and T₁ times of the near-interface donors are reduced by several orders of magnitude from those in the bulk, at T≤13K . The T₂ times of the P31 donor electrons are in agreement with the prediction by de Sousa that they are limited by interface-defect induced field noise.