Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films
Abstract
We report a direct observation of the microscopic origin of the bipolar resistive switching behavior in nanoscale titanium oxide films. Through a high-resolution transmission electron microscopy, an analytical transmission electron microscopy technique using energy-filtering transmission electron microscopy, and an in situ x-ray photoelectron spectroscopy, we demonstrated that the oxygen ions piled up at the top interface by an oxidation-reduction between the titanium oxide layer and the top Al metal electrode. We also found that the drift of oxygen ions during the on/off switching induced the bipolar resistive switching in the titanium oxide thin films.
- Publication:
-
Applied Physics Letters
- Pub Date:
- October 2009
- DOI:
- 10.1063/1.3251784
- arXiv:
- arXiv:0904.3628
- Bibcode:
- 2009ApPhL..95p2108J
- Keywords:
-
- aluminium;
- electrodes;
- oxidation;
- reduction (chemical);
- switching;
- thin films;
- titanium compounds;
- transmission electron microscopy;
- vacancies (crystal);
- X-ray photoelectron spectra;
- 68.55.-a;
- 68.37.Og;
- 79.60.Jv;
- 61.72.jd;
- Thin film structure and morphology;
- High-resolution transmission electron microscopy;
- Interfaces;
- heterostructures;
- nanostructures;
- Vacancies;
- Condensed Matter - Materials Science;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 10 pages, 4 figures