Electrical injection and detection of spin-polarized electrons in silicon through an Fe3Si/Si Schottky tunnel barrier
Abstract
We demonstrate electrical injection and detection of spin-polarized electrons in silicon (Si) using epitaxially grown Fe3Si/Si Schottky-tunnel-barrier contacts. By an insertion of a δ-doped n+-Si layer (∼1019 cm-3) near the interface between a ferromagnetic Fe3Si contact and a Si channel (∼1015 cm-3), we achieve a marked enhancement in the tunnel conductance for reverse-bias characteristics of the Fe3Si/Si Schottky diodes. Using laterally fabricated four-probe geometries with the modified Fe3Si/Si contacts, we detect nonlocal output signals that originate from the spin accumulation in a Si channel at low temperatures.
- Publication:
-
Applied Physics Letters
- Pub Date:
- May 2009
- DOI:
- 10.1063/1.3130211
- arXiv:
- arXiv:0904.2980
- Bibcode:
- 2009ApPhL..94r2105A
- Keywords:
-
- 72.25.-b;
- 75.25.+z;
- 73.30.+y;
- 73.40.Ns;
- Spin polarized transport;
- Spin arrangements in magnetically ordered materials;
- Surface double layers Schottky barriers and work functions;
- Metal-nonmetal contacts;
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Materials Science
- E-Print:
- 4 pages, 3 figures