THz-pump/THz-probe spectroscopy of semiconductors at high field strengths [Invited]
Abstract
Pumping n-type GaAs and InSb with ultrafast THz pulses having intensities higher than 150 MW/cm2 shows strong free carrier absorption saturation at temperatures of 300 K and 200 K respectively. If the energy imparted to the carriers exceeds the bandgap, impact ionization processes can occur. The dynamics of carrier cooling in GaAs and impact ionization in InSb were monitored using THz-pump/THz probe spectroscopy which provides both sub-bandgap excitation and probing, eliminating any direct optical electron-hole generation that complicates the evaluation of results in optical pump/THz probe experiments.
- Publication:
-
Journal of the Optical Society of America B Optical Physics
- Pub Date:
- September 2009
- DOI:
- 10.1364/JOSAB.26.000A29
- arXiv:
- arXiv:0904.2516
- Bibcode:
- 2009JOSAB..26A..29H
- Keywords:
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- Condensed Matter - Materials Science;
- Condensed Matter - Other Condensed Matter
- E-Print:
- 7 figures, J. Opt. Soc. Am. B. Special issue of THz wave photonics (2009)