First-principles study to obtain evidence of low interface defect density at Ge/GeO2 interfaces
Abstract
We present evidence of low defect density at Ge/GeO2 interfaces on the basis of first-principles total energy calculations. The energy advantages of atom emission from the Ge/GeO2 interface to release stress due to lattice mismatch are compared with those from the Si/SiO2 interface. The advantages of Ge/GeO2 are found to be less than those of Si/SiO2 because of the high flexibility of the bonding networks in GeO2. Thus, the suppression of Ge-atom emission during the oxidation process leads to improved electrical properties of the Ge/GeO2 interfaces.
- Publication:
-
Applied Physics Letters
- Pub Date:
- July 2009
- DOI:
- 10.1063/1.3168501
- arXiv:
- arXiv:0904.2474
- Bibcode:
- 2009ApPhL..95a1908S
- Keywords:
-
- 73.40.Qv;
- 71.15.Nc;
- 71.15.Mb;
- 81.05.Cy;
- Metal-insulator-semiconductor structures;
- Total energy and cohesive energy calculations;
- Density functional theory local density approximation gradient and other corrections;
- Elemental semiconductors;
- Condensed Matter - Materials Science;
- Condensed Matter - Other Condensed Matter
- E-Print:
- doi:10.1063/1.3168501