Polarization-Induced Zener Tunnel Junctions in Wide-Bandgap Heterostructures
Abstract
The large electronic polarization in III-V nitrides allow for novel physics not possible in other semiconductor families. In this work, interband Zener tunneling in wide-bandgap GaN heterojunctions is demonstrated by using polarization-induced electric fields. The resulting tunnel diodes are more conductive under reverse bias, which has applications for zero-bias rectification and mm-wave imaging. Since interband tunneling is traditionally prohibitive in wide-bandgap semiconductors, these polarization-induced structures and their variants can enable a number of devices such as multijunction solar cells that can operate under elevated temperatures and high fields.
- Publication:
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arXiv e-prints
- Pub Date:
- March 2009
- DOI:
- 10.48550/arXiv.0903.2901
- arXiv:
- arXiv:0903.2901
- Bibcode:
- 2009arXiv0903.2901S
- Keywords:
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- Condensed Matter - Materials Science
- E-Print:
- 4 pages, 5 Figures