Diameter-Dependent Electronic Transport Properties of Au-Catalyst/Ge-Nanowire Schottky Diodes
Abstract
We present electronic transport measurements in individual Au-catalyst/Ge-nanowire interfaces demonstrating the presence of a Schottky barrier. Surprisingly, the small-bias conductance density increases with decreasing diameter. Theoretical calculations suggest that this effect arises because electron-hole recombination in the depletion region is the dominant charge transport mechanism, with a diameter dependence of both the depletion width and the electron-hole recombination time. The recombination time is dominated by surface contributions and depends linearly on the nanowire diameter.
- Publication:
-
Physical Review Letters
- Pub Date:
- March 2009
- DOI:
- 10.1103/PhysRevLett.102.106805
- arXiv:
- arXiv:0903.1290
- Bibcode:
- 2009PhRvL.102j6805L
- Keywords:
-
- 73.63.Rt;
- 72.20.Jv;
- 85.35.-p;
- Nanoscale contacts;
- Charge carriers: generation recombination lifetime and trapping;
- Nanoelectronic devices;
- Condensed Matter - Materials Science
- E-Print:
- To appear in Physical Review Letters