A discontinuous Galerkin solver for Boltzmann-Poisson systems in nano devices
Abstract
In this paper, we present results of a discontinuous Galerkin (DG) scheme applied to deterministic computations of the transients for the Boltzmann-Poisson system describing electron transport in semiconductor devices. The collisional term models optical-phonon interactions which become dominant under strong energetic conditions corresponding to nano-scale active regions under applied bias. The proposed numerical technique is a finite element method using discontinuous piecewise polynomials as basis functions on unstructured meshes. It is applied to simulate hot electron transport in bulk silicon, in a silicon $n^+$-$n$-$n^+$ diode and in a double gated 12nm MOSFET. Additionally, the obtained results are compared to those of a high order WENO scheme simulation and DSMC (Discrete Simulation Monte Carlo) solvers.
- Publication:
-
Computer Methods in Applied Mechanics and Engineering
- Pub Date:
- August 2009
- DOI:
- 10.1016/j.cma.2009.05.015
- arXiv:
- arXiv:0902.3514
- Bibcode:
- 2009CMAME.198.3130C
- Keywords:
-
- Mathematics - Numerical Analysis;
- Mathematical Physics;
- 76P05;
- 82D37;
- 82C70;
- 74S05;
- 46N55;
- 65C50
- E-Print:
- 51 pages, 82 figures