Electron-phonon interactions for optical-phonon modes in few-layer graphene: First-principles calculations
Abstract
We present a first-principles study of the electron-phonon (e-ph) interactions and their contributions to the linewidths for the optical-phonon modes at Γ and K in one-layer to three-layer graphene. It is found that, due to the interlayer coupling and the stacking geometry, the high-frequency optical-phonon modes in few-layer graphene couple with different valence and conduction bands, giving rise to different e-ph interaction strengths for these modes. Some of the multilayer optical modes derived from the Γ-E2g mode of monolayer graphene exhibit slightly higher frequencies and much reduced linewidths. In addition, the linewidths of K-A1' related modes in multilayers depend on the stacking pattern and decrease with increasing layer numbers.
- Publication:
-
Physical Review B
- Pub Date:
- March 2009
- DOI:
- 10.1103/PhysRevB.79.115443
- arXiv:
- arXiv:0901.3086
- Bibcode:
- 2009PhRvB..79k5443Y
- Keywords:
-
- 63.22.-m;
- 63.20.kd;
- 73.21.Ac;
- 71.38.-k;
- Phonons or vibrational states in low-dimensional structures and nanoscale materials;
- Phonon-electron interactions;
- Multilayers;
- Polarons and electron-phonon interactions;
- Condensed Matter - Materials Science;
- Condensed Matter - Strongly Correlated Electrons
- E-Print:
- 6 pages,5 figures, submitted to PRB