Possible effect of collective modes in zero magnetic field transport in an electron-hole bilayer
Abstract
We report single layer resistivities of two-dimensional electron and hole gases in an electron-hole bilayer with a 10 nm barrier. In a regime where the interlayer interaction is stronger than the intralayer interaction, we find that an insulating state (dρ/dT<0) emerges at T∼1.5K or lower, when both the layers are simultaneously present. This happens deep in the “metallic” regime, even in layers with kFl>500 , thus making conventional mechanisms of localization due to disorder improbable. We suggest that this insulating state may be due to a charge-density-wave phase, as has been expected in electron-hole bilayers from the Singwi-Tosi-Land-Sjölander approximation-based calculations of Liu [Phys. Rev. B 53, 7923 (1996)]. Our results are also in qualitative agreement with recent path-integral Monte Carlo simulations of a two component plasma in the low-temperature regime [Ludwig , Contrib. Plasma Phys. 47, 335 (2007)]
- Publication:
-
Physical Review B
- Pub Date:
- September 2009
- DOI:
- 10.1103/PhysRevB.80.125323
- arXiv:
- arXiv:0812.3319
- Bibcode:
- 2009PhRvB..80l5323C
- Keywords:
-
- III-V semiconductor-to-semiconductor contacts;
- p-n junctions;
- and heterojunctions;
- Collective excitations;
- 73.40.Kp;
- 73.43.Lp;
- III-V semiconductor-to-semiconductor contacts p-n junctions and heterojunctions;
- Collective excitations;
- Condensed Matter - Strongly Correlated Electrons;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 5 pages + 3 EPS figures (replaced with published version)