Random-Gap Model for Graphene and Graphene Bilayers
Abstract
The effect of a randomly fluctuating gap, created by a random staggered potential, is studied in a monolayer and a bilayer of graphene. The density of states, the one-particle scattering rate, and the transport properties (diffusion coefficient and conductivity) are calculated at the neutrality point. All of these quantities vanish at a critical value of the average staggered potential, signaling a continuous transition to an insulating behavior. Transport quantities are directly linked to the one-particle scattering rate. Although the behavior is qualitatively the same in mono- and bilayers, the effect of disorder is much stronger in the latter.
- Publication:
-
Physical Review Letters
- Pub Date:
- March 2009
- DOI:
- 10.1103/PhysRevLett.102.126802
- arXiv:
- arXiv:0811.3932
- Bibcode:
- 2009PhRvL.102l6802Z
- Keywords:
-
- 81.05.Uw;
- 71.55.Ak;
- 72.10.Bg;
- 73.20.Jc;
- Carbon diamond graphite;
- Metals semimetals and alloys;
- General formulation of transport theory;
- Delocalization processes;
- Condensed Matter - Mesoscopic Systems and Quantum Hall Effect
- E-Print:
- 5 pages, 1 figure