Diffusive Transport in Quasi-2D and Quasi-1D Electron Systems
Abstract
Quantum-confined semiconductor structures are the cornerstone of modern-day electronics. Spatial confinement in these structures leads to formation of discrete low-dimensional subbands. At room temperature, carriers transfer among different states due to efficient scattering with phonons, charged impurities, surface roughness and other electrons, so transport is scattering-limited (diffusive) and well described by the Boltzmann transport equation. In this review, we present the theoretical framework used for the description and simulation of diffusive electron transport in quasi-two-dimensional and quasi-one-dimensional semiconductor structures. Transport in silicon MOSFETs and nanowires is presented in detail.
- Publication:
-
arXiv e-prints
- Pub Date:
- November 2008
- DOI:
- 10.48550/arXiv.0811.1937
- arXiv:
- arXiv:0811.1937
- Bibcode:
- 2008arXiv0811.1937K
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Disordered Systems and Neural Networks;
- Condensed Matter - Materials Science
- E-Print:
- Review article, to appear in Journal of Computational and Theoretical Nanoscience