Comparison of atomistic and continuum theoretical approaches to determine electronic properties of GaN/AlN quantum dots
Abstract
In this work we present a comparison of multiband kṡp models, the effective-bond-orbital approach, and an empirical tight-binding model to calculate the electronic structure for the example of a truncated pyramidal GaN/AlN self-assembled quantum dot with a zinc-blende structure. For the system under consideration, we find very good agreement between the results of the microscopic models and the eight-band kṡp formalism, in contrast to a 6+2 -band kṡp model, where conduction band and valence band are assumed to be decoupled. This indicates a surprisingly strong coupling between conduction- and valence-band states for the wide-band-gap materials GaN and AlN. Special attention is paid to the possible influence of the weak spin-orbit coupling on the localized single-particle wave functions of the investigated structure.
- Publication:
-
Physical Review B
- Pub Date:
- December 2008
- DOI:
- 10.1103/PhysRevB.78.235302
- arXiv:
- arXiv:0811.1461
- Bibcode:
- 2008PhRvB..78w5302M
- Keywords:
-
- 71.15.-m;
- 73.21.La;
- 73.22.Dj;
- Methods of electronic structure calculations;
- Quantum dots;
- Single particle states;
- Condensed Matter - Materials Science
- E-Print:
- doi:10.1103/PhysRevB.78.235302