High-quality quantum point contact in two-dimensional GaAs (311)A hole system
Abstract
We studied ballistic transport across a quantum point contact (QPC) defined in a high-quality GaAs (311)A two-dimensional hole system using shallow etching and top gating. The QPC conductance exhibits up to 11 quantized plateaus. The ballistic one-dimensional subbands are tuned by changing the lateral confinement and the Fermi energy of the holes in the QPC. We demonstrate that the positions of the plateaus (in gate voltage), the source-drain data, and the negative magnetoresistance data can be understood in a simple model that takes into account the variation, with gate bias, of the hole density and the width of the QPC conducting channel.
- Publication:
-
Applied Physics Letters
- Pub Date:
- November 2008
- DOI:
- arXiv:
- arXiv:0809.5047
- Bibcode:
- 2008ApPhL..93u2101S
- Keywords:
-
- 73.23.Ad;
- 73.50.Fq;
- 73.50.Jt;
- 73.61.Ey;
- 73.21.-b;
- 73.63.-b;
- Ballistic transport;
- High-field and nonlinear effects;
- Galvanomagnetic and other magnetotransport effects;
- III-V semiconductors;
- Electron states and collective excitations in multilayers quantum wells mesoscopic and nanoscale systems;
- Electronic transport in nanoscale materials and structures;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- Appl. Phys. Lett. 93, 212101 (2008)