Observation of excited states in a p-type GaAs quantum dot
Abstract
A quantum dot fabricated by scanning probe oxidation lithography on a p-type, C-doped GaAs/AlGaAs heterostructure is investigated by low-temperature electrical conductance measurements. Clear Coulomb blockade oscillations are observed and analyzed in terms of sequential tunneling through the single-particle levels of the dot at Thole=185 mK. The charging energies as large as ~2 meV evaluated from Coulomb diamond measurements together with the well-resolved single-hole excited-state lines in the charge stability diagram indicate that the dot is operated with a small number of confined particles close to the ultimate single-hole regime.
- Publication:
-
EPL (Europhysics Letters)
- Pub Date:
- December 2008
- DOI:
- 10.1209/0295-5075/84/57004
- arXiv:
- arXiv:0809.1362
- Bibcode:
- 2008EL.....8457004K
- Keywords:
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- Condensed Matter - Mesoscopic Systems and Quantum Hall Effect
- E-Print:
- 5 pages, 5 figures