Gate control of the tunneling magnetoresistance in double-barrier junctions
Abstract
We calculate the conductances and the tunneling magnetoresistance (TMR) of double magnetic tunnel junctions, taking as a model example junctions composed of Fe/ZnSe/Fe/ZnSe/Fe (001). The calculations are done as a function of the gate voltage applied to the in-between Fe layer slab. We find that the application of a gate voltage to the in-between Fe slab strongly affects the junctions' TMR due to the tuning or untuning of conductance resonances mediated by quantum well states. The gate voltage allows a significant enhancement of the TMR, in a more controllable way than by changing the thickness of the in-between Fe slab. This effect may be useful in the design of future spintronic devices based on the TMR effect, requiring large and controllable TMR values.
- Publication:
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arXiv e-prints
- Pub Date:
- September 2008
- DOI:
- 10.48550/arXiv.0809.0626
- arXiv:
- arXiv:0809.0626
- Bibcode:
- 2008arXiv0809.0626P
- Keywords:
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- Condensed Matter - Mesoscopic Systems and Quantum Hall Effect
- E-Print:
- Paper was written Feb. 2008. v2: minor corrections (misspelled author's name,introduction)