Thermal-radiation-induced nonequilibrium carriers in intrinsic graphene
Abstract
We have examined an intrinsic graphene connected to the phonon thermostat at temperature T under irradiation of thermal photons with temperature Tr , different from T . The distribution of nonequilibrium electron-hole pairs was obtained for the cases when the interparticle scattering is unessential and when the Coulomb scattering dominates. For the first case, the distribution function is determined by the interplay of intraband relaxation of energy due to acoustic phonons and interband radiative transitions caused by the thermal radiation. For the alter case, the quasiequilibrium distribution with effective temperature and nonequilibrium concentration, determined through balance equations, is realized. Due to the effect of thermal radiation with temperature Tr≠T , concentration and conductivity of carriers in graphene are modified essentially. It is demonstrated that at Tr>T , the negative interband absorption caused by the inversion of carriers distribution can occur.
- Publication:
-
Physical Review B
- Pub Date:
- January 2009
- DOI:
- 10.1103/PhysRevB.79.033406
- arXiv:
- arXiv:0808.3146
- Bibcode:
- 2009PhRvB..79c3406R
- Keywords:
-
- 73.50.Fq;
- 73.63.-b;
- 81.05.Uw;
- High-field and nonlinear effects;
- Electronic transport in nanoscale materials and structures;
- Carbon diamond graphite;
- Condensed Matter - Materials Science;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 5 pages, 4 figures