Rashba spin-splitting of electrons in asymmetric quantum wells
Abstract
We report a comparison of conduction electron spin-splitting in III-V quantum wells caused by asymmetric band edges with that due to applied electric field. Measurements in GaAs/AlGaAs quantum wells and calculations on a range of heterostructures, both symmetric and asymmetric, lead to the conclusion that in a heterostructure with nearly “isomorphous” band edges (i.e., with conduction and valence band-edge potentials related by a constant factor, exemplified by GaAs/AlGaAs) spin splittings will be unmeasurably small even in a highly asymmetric structure. Application of an external electric field or the presence of a Hartree potential gradient in the system will generally break isomorphism and therefore produce a significant spin splitting.
- Publication:
-
Physical Review B
- Pub Date:
- July 2010
- DOI:
- 10.1103/PhysRevB.82.045317
- arXiv:
- arXiv:0807.4845
- Bibcode:
- 2010PhRvB..82d5317E
- Keywords:
-
- 71.70.Ej;
- 72.25.Fe;
- 72.25.Rb;
- 73.21.Fg;
- Spin-orbit coupling Zeeman and Stark splitting Jahn-Teller effect;
- Optical creation of spin polarized carriers;
- Spin relaxation and scattering;
- Quantum wells;
- Condensed Matter - Other Condensed Matter
- E-Print:
- 7 pages, 5 figs