Strain control of the magnetic anisotropy in (Ga,Mn) (As,P) ferromagnetic semiconductor layers
Abstract
A small fraction of phosphorus (up to 10%) was incorporated in ferromagnetic (Ga,Mn)As epilayers grown on a GaAs substrate. P incorporation allows reducing the epitaxial strain or even change its sign, resulting in strong modifications of the magnetic anisotropy. In particular a reorientation of the easy axis toward the growth direction is observed for high P concentration. It offers an interesting alternative to the metamorphic approach, in particular for magnetization reversal experiments where epitaxial defects strongly affect the domain wall propagation.
- Publication:
-
Applied Physics Letters
- Pub Date:
- July 2008
- DOI:
- 10.1063/1.2963979
- arXiv:
- arXiv:0807.0748
- Bibcode:
- 2008ApPhL..93b1123L
- Keywords:
-
- 75.30.Gw;
- 75.70.Ak;
- 75.60.Ch;
- 75.50.Pp;
- 61.72.U-;
- Magnetic anisotropy;
- Magnetic properties of monolayers and thin films;
- Domain walls and domain structure;
- Magnetic semiconductors;
- Doping and impurity implantation;
- Condensed Matter - Materials Science
- E-Print:
- Applied Physics Letters 93 (2008) 021123