Fabrication of closely spaced, independently contacted Electron-Hole bilayers in GaAs-AlGaAs heterostructures
Abstract
We describe a technique to fabricate closely spaced electron-hole bilayers in GaAs-AlGaAs heterostructures. Our technique incorporates a novel method for making shallow contacts to a low density ($<10^{11}cm^{-2}$) 2-dimensional electron gas (2DEG) that do not require annealing. Four terminal measurements on both layers (25nm apart) are possible. Measurements show a hole mobility $\mu_{h}>10^{5}{\rm cm}^{2}{\rm V}^{-1}{\rm s}^{-1}$ and an electron mobility $\mu_{e}>10^{6}{\rm cm}^{2}{\rm V}^{-1}{\rm s}^{-1}$ at 1.5K. Preliminary drag measurements made down to T=300mK indicate an enhancement of coulomb interaction over the values obtained from a static Random Phase Approximation (RPA) calculation.
- Publication:
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arXiv e-prints
- Pub Date:
- July 2008
- DOI:
- 10.48550/arXiv.0807.0106
- arXiv:
- arXiv:0807.0106
- Bibcode:
- 2008arXiv0807.0106K
- Keywords:
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- Condensed Matter - Mesoscopic Systems and Quantum Hall Effect;
- Condensed Matter - Strongly Correlated Electrons
- E-Print:
- 4 pages, 4 EPS figures