FAST TRACK COMMUNICATION: Field modulation in bilayer graphene band structure
Abstract
Using an external electric field, one can modulate the band gap of Bernal stacked bilayer graphene by breaking the A-\tilde {\mathrm {B}} symmetry. We analyze strain effects on the bilayer graphene using the extended Hückel theory and find that reduced interlayer distance results in higher band gap modulation, as expected. Furthermore, above about 2.5 Å interlayer distance, the band gap is direct, follows a convex relation with the electric field and saturates to a value determined by the interlayer distance. However, below about 2.5 Å, the band gap is indirect, the trend becomes concave and a threshold electric field is observed, which also depends on the stacking distance.
- Publication:
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Journal of Physics Condensed Matter
- Pub Date:
- March 2009
- DOI:
- 10.1088/0953-8984/21/10/102202
- arXiv:
- arXiv:0806.3128
- Bibcode:
- 2009JPCM...21j2202R
- Keywords:
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- Condensed Matter - Mesoscopic Systems and Quantum Hall Effect;
- Condensed Matter - Materials Science
- E-Print:
- 3 pages, 5 figures - v1 and v2 are the same, uploaded twice - v3, some typos fixed and a reference added