Remote hole-doping of Mott insulators on the nanometer scale
Abstract
At interfaces between polar and nonpolar perovskite oxides, an unusual electron-doping has been previously observed, due to electronic reconstructions. We report on remote hole-doping at an interface composed of only polar layers, revealed by high-resolution hard x-ray core-level photoemission spectroscopy. In LaAlO3/LaVO3/LaAlO3 trilayers, the vanadium valence systematically evolves from the bulk value of V3+ to higher oxidation states with decreasing LaAlO3 cap layer thickness. These results provide a synthetic approach to hole-doping transition metal oxide heterointerfaces without invoking a polar discontinuity.
- Publication:
-
arXiv e-prints
- Pub Date:
- June 2008
- DOI:
- 10.48550/arXiv.0806.2191
- arXiv:
- arXiv:0806.2191
- Bibcode:
- 2008arXiv0806.2191T
- Keywords:
-
- Condensed Matter - Strongly Correlated Electrons;
- Condensed Matter - Materials Science
- E-Print:
- Phys. Rev. Lett. 102, 236401 (2009)