L-valley electron g-factor in bulk GaAs and AlAs
Abstract
We study the Landé g-factor of conduction electrons in the L-valley of bulk GaAs and AlAs by using a three-band k ṡp model together with the tight-binding model. We find that the L-valley g-factor is highly anisotropic and can be characterized by two components g⊥ and g∥. g⊥ is close to the free electron Landé factor but g∥ is strongly affected by the remote bands. The contribution from remote bands on g∥ depends on how the remote bands are treated. However, when the magnetic field is in the Voigt configuration, which is widely used in the experiments, different models give almost identical g-factor.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- September 2008
- DOI:
- 10.1063/1.2986151
- arXiv:
- arXiv:0806.1252
- Bibcode:
- 2008JAP...104f3719S
- Keywords:
-
- 71.18.+y;
- 71.15.Ap;
- 78.20.Ls;
- Fermi surface: calculations and measurements;
- effective mass g factor;
- Basis sets and related methodology;
- Magnetooptical effects;
- Condensed Matter - Materials Science
- E-Print:
- 4 pages, 1 figure, To be published in J. App. Phys. 104, 2008