Ballistic hot electron transport in graphene
Abstract
We theoretically study the inelastic scattering rate and the carrier mean free path for energetic hot electrons in graphene, including both electron-electron and electron-phonon interactions. Taking account of optical phonon emission and electron-electron scattering, we find that the inelastic scattering time τ ∼10-2-10-1ps and the mean free path l ∼10-102nm for electron densities n =1012-1013cm-2. In particular, we find that the mean free path exhibits a finite jump at the phonon energy 200meV due to electron-phonon interaction. Our results are directly applicable to device structures where ballistic transport is relevant with inelastic scattering dominating over elastic scattering.
- Publication:
-
Applied Physics Letters
- Pub Date:
- July 2008
- DOI:
- 10.1063/1.2956669
- arXiv:
- arXiv:0806.0436
- Bibcode:
- 2008ApPhL..93b3128T
- Keywords:
-
- 73.23.Ad;
- 72.20.Ht;
- 73.63.-b;
- 71.38.-k;
- 63.22.-m;
- 61.48.-c;
- Ballistic transport;
- High-field and nonlinear effects;
- Electronic transport in nanoscale materials and structures;
- Polarons and electron-phonon interactions;
- Phonons or vibrational states in low-dimensional structures and nanoscale materials;
- Structure of fullerenes and related hollow molecular clusters;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 4 pages