Magnetic reversal under external field and current-driven domain wall motion in (Ga,Mn)As: influence of extrinsic pinning
Abstract
We investigate the anisotropy of magnetic reversal and current-driven domain wall motion in annealed Ga_0.95Mn_0.05As thin films and Hall bar devices with perpendicular magnetic anisotropy. Hall bars with current direction along the [110] and [1-10] crystallographic axes are studied. The [110] device shows larger coercive field than the [1-10] device. Strong anisotropy is observed during magnetic reversal between [110] and [1-10] directions. A power law dependence is found for both devices between the critical current (JC) and the magnetization (M), with J_C is proportional to M^2.6. The domain wall motion is strongly influenced by the presence of local pinning centres.
- Publication:
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arXiv e-prints
- Pub Date:
- May 2008
- DOI:
- 10.48550/arXiv.0805.3998
- arXiv:
- arXiv:0805.3998
- Bibcode:
- 2008arXiv0805.3998Y
- Keywords:
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- Condensed Matter - Mesoscopic Systems and Quantum Hall Effect;
- Condensed Matter - Materials Science
- E-Print:
- 12 pages, 12 figures, submitted to New Journal of Physics