Temperature-Dependent Transport in Suspended Graphene
Abstract
The resistivity of ultraclean suspended graphene is strongly temperature (T) dependent for 5<T<240K. At Ttilde 5K transport is near-ballistic in a device of ∼2μm dimension and a mobility ∼170000cm2/Vs. At large carrier density, n>0.5×1011cm-2, the resistivity increases with increasing T and is linear above 50 K, suggesting carrier scattering from acoustic phonons. At T=240K the mobility is ∼120000cm2/Vs, higher than in any known semiconductor. At the charge neutral point we observe a nonuniversal conductivity that decreases with decreasing T, consistent with a density inhomogeneity <108cm-2.
- Publication:
-
Physical Review Letters
- Pub Date:
- August 2008
- DOI:
- 10.1103/PhysRevLett.101.096802
- arXiv:
- arXiv:0805.1830
- Bibcode:
- 2008PhRvL.101i6802B
- Keywords:
-
- 73.50.-h;
- 72.10.-d;
- Electronic transport phenomena in thin films;
- Theory of electronic transport;
- scattering mechanisms;
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Materials Science
- E-Print:
- doi:10.1103/PhysRevLett.101.096802