Quantum Hall effect in bilayer and multilayer graphene with finite Fermi energy
Abstract
We discuss the quantum Hall effect of bilayer graphene with finite gate voltage where the Fermi energy exceeds the interlayer hopping energy. We calculated magnetic susceptibility, and diagonal and off-diagonal conductivities in finite-magnetic-field formalism. We also observed crossover of integer quantum Hall effect from two independent monolayer type systems to a strongly coupled bilayer system by changing the ratio of interlayer hopping energy and the Fermi energy. We also discuss the case of multilayer systems with Bernal stacking.
- Publication:
-
Physical Review B
- Pub Date:
- July 2008
- DOI:
- 10.1103/PhysRevB.78.033403
- arXiv:
- arXiv:0804.4599
- Bibcode:
- 2008PhRvB..78c3403N
- Keywords:
-
- 73.43.Cd;
- 71.70.Di;
- 81.05.Uw;
- 72.80.Le;
- Theory and modeling;
- Landau levels;
- Carbon diamond graphite;
- Polymers;
- organic compounds;
- Condensed Matter - Mesoscale and Nanoscale Physics;
- Condensed Matter - Strongly Correlated Electrons
- E-Print:
- 4 pages, 3 figures