Transport and drag in undoped electron-hole bilayers
Abstract
We investigate transport and Coulomb drag properties of semiconductor-based electron-hole bilayer systems. Our calculations are motivated by recent experiments in undoped electron-hole bilayer structures based on GaAs-AlGaAs gated double quantum well systems. Our results indicate that the background charged impurity scattering is the most dominant resistive scattering mechanism in the high-mobility bilayers. We also find that the drag transresistivity is significantly enhanced when the electron-hole layer separation is small due to the exchange induced renormalization of the single layer compressibility. However, the Fermi-liquid many-body approach cannot explain the recently observed upturn in the drag resistance with the lowering of temperature, which may be indicating the emergence of an apparent non-Fermi-liquid excitonic phase in closely spaced bilayers.
- Publication:
-
Physical Review B
- Pub Date:
- August 2008
- DOI:
- 10.1103/PhysRevB.78.075430
- arXiv:
- arXiv:0804.3311
- Bibcode:
- 2008PhRvB..78g5430H
- Keywords:
-
- 73.40.-c;
- 73.21.Ac;
- 71.30.+h;
- Electronic transport in interface structures;
- Multilayers;
- Metal-insulator transitions and other electronic transitions;
- Condensed Matter - Mesoscopic Systems and Quantum Hall Effect;
- Condensed Matter - Strongly Correlated Electrons
- E-Print:
- 7 pages 3 figures