Few-electron semiconductor quantum dots with Gaussian confinement
Abstract
We have performed Hartree-Fock calculations of the electronic structure of N ≤ 10 electrons in a quantum dot modeled with a confining Gaussian potential well. We discuss the conditions for the stability of N bound electrons in the system. We show that the most relevant parameter determining the number of bound electrons is V 0 R 2. Such a feature arises from widely valid scaling properties of the confining potential. Gaussian Quantum dots having N = 2, 5, and 8 electrons are particularly stable in agreement with the Hund rule. The shell structure becomes less and less noticeable as the well radius increases.
- Publication:
-
Central European Journal of Physics
- Pub Date:
- March 2009
- DOI:
- 10.2478/s11534-008-0132-z
- arXiv:
- arXiv:0804.1961
- Bibcode:
- 2009CEJPh...7...12G
- Keywords:
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- Quantum dots;
- Gaussian potential;
- electronic structure;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 14 pages, 4 figures